Singular conductance of a spin 1 quantum dot

We interpret the recent observation of a zero-bias anomaly in spin-1 quantum dots in terms of an underscreened Kondo effect. Although a spin-1 quantum dots are expected to undergo a two-stage quenching effect, in practice the log normal distribution of Kondo temperatures leads to a broad temperature region dominated by underscreened Kondo physics. General arguments, based on the asymptotic decoupling between the partially screened moment and the leads, predict a singular temperature and voltage dependence of the conductance $G$ and differential conductance $g$, resulting in $dg/dT\sim 1/T$ and $dG/dV \sim 1/V$. Using a Schwinger boson approach, we show how these qualitative expectations are borne out in a detailed many body calculation.Comment: Four pages, four figures. Paper revised with additional references added in response to feedback from reader

Excited state spectroscopy in carbon nanotube double quantum dots

We report on low temperature measurements in a fully tunable carbon nanotube double quantum dot. A new fabrication technique has been used for the top-gates in order to avoid covering the whole nanotube with an oxide layer as in previous experiments. The top-gates allow us to form single dots, control the coupling between them and we observe four-fold shell filling. We perform inelastic transport spectroscopy via the excited states in the double quantum dot, a necessary step towards the implementation of new microwave-based experiments.Comment: 16 pages, 6 figures, submitted to nanoletter

Transport through Zero-Dimensional States in a Quantum Dot

We have studied the electron transport through zero-dimensional (0D) states. 0D states are formed when one-dimensional edge channels are confined in a quantum dot. The quantum dot is defined in a two-dimensional electron gas with a split gate technique. To allow electronic transport, connection to the dot is arranged via two quantum point contacts, which have adjustable selective transmission properties for edge channels. The 0D states show up as pronounced oscillations in the conductance (up to 40% of e2/h), when the flux enclosed by the confined edge channel is varied, either by changing the magnetic field or the gate voltage. A prerequisite for the appearance of 0D states is that the transport through the entire device is adiabatic (i.e. with conservation of quantum numbers), which will be shown to occur at high magnetic field. The experimental results are in good agreement with theory and show that in the ballistic quantum Hall regime the current is carried entirely by edge channels.

Diameter-dependent conductance of InAs nanowires

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. Contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.Comment: 9 pages, 5 figure

A Tunable Kondo Effect in Quantum Dots

We demonstrate a tunable Kondo effect realized in small quantum dots. We can switch our dot from a Kondo impurity to a non-Kondo system as the number of electrons on the dot is changed from odd to even. We show that the Kondo temperature can be tuned by means of a gate voltage as a single-particle energy state nears the Fermi energy. Measurements of the temperature and magnetic field dependence of a Coulomb-blockaded dot show good agreement with predictions of both equilibrium and non-equilibrium Kondo effects.Comment: 8 pages, 4 figure

Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einstein's coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically.Comment: 6 pages, 4 figure